XRML 1 Beamline

Characteristics of the XRLM 1 beamline

Property

Value

Exposure spectrum

 ‘white light’ (no optics)

Vacuum windows

1 Be window (125 µm thick)

Transmitted spectrum

2 keV – 8 keV (10 keV @ 1.5 GeV)

Integrated power* incident on the mask

415 mW/cm/100 mA @ 1.3 GeV

1140 mW/cm/100 mA @ 1.5 GeV

Distance source to mask

10 m

Horizontal angle of acceptance

10 mrad

Horizontal beam width at mask

100 mm

Low energy filters

Up to 11 individual filters (C, Al) and any combination

Exposure station / scanner

DEX 02 scanner, Jenoptik GmbH, Germany

Mask formats

 4” steel ring

NIST ring

Tilt/rotate option

Available, remotely controlled

Aligned exposure option

Available, integrated in scanner chamber

* The term ‘integrated power’ describes the integration over the vertical beam profile. The unit “W/cm/100mA” reflects the amount of energy deposited in 1cm horizontal distance on the mask/substrate at an electron current of 100mA.
 

Planned upgrade

With financial support from DARPA (grant N 66001-00-1-8943) a double mirror system will be purchased and installed into this beamline. The beamline will then be capable of exposing in ‘white light’ as well as ‘mirror light’ mode. Technical details of the mirror system are currently discussed with the vendor and will be provided in the near future. Scheduled delivery of the mirror system to CAMD is December 2001.

 

Drawing of the XRLM 1 beamline (side-view)

 

 

 

 

 

 

 

 

 

 

 

 

 

 



 XRML 2 Beamline

 

Characteristics of XRLM 2

Property

Value

Exposure spectrum

 ‘white light’ (no optics)

Vacuum windows

2 Be windows (50 µm, 125 µm thick)

Transmitted spectrum

2.2 keV – 8 keV (10 keV @ 1.5 GeV)

Integrated power* incident on the mask

330 mW/cm/100 mA @ 1.3 GeV

970 mW/cm/100 mA @ 1.5 GeV

Distance source to mask

10 m

Horizontal angle of acceptance

10.0 mrad

Horizontal beam width at mask

100 mm

Low energy filters

Aluminum (3 mm, 6 mm, 10 mm and any combination of the three)

Exposure station / scanner

DEX 01 from Jenoptik GmbH

Mask formats

 4” steel ring

NIST ring

Tilt/rotate option

Not available

Aligned exposure option

Not available

* The term ‘integrated power’ describes the integration over the vertical beam profile. The unit “W/cm/100mA” reflects the amount of energy deposited in 1cm horizontal distance on the mask/substrate at an electron current of 100mA.
 

Planned upgrade

In order to continuously control the vertical position of the beam and to directly measure the photon flux incident onto the sample an in –situ beam monitoring system using a blade beam position monitor will be installed. This system will increase the reliability of the exposure process, an important criterion for improved process control, process stability and quality control. The system will be delivered in April 2001.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

XRML 3 Beamline

 

Characteristics of XRLM 3 beamline

Property

Value

Exposure spectrum

 ‘white light’ (no optics)

Vacuum windows

1 Be window (125 µm thick)

Transmitted spectrum

2 keV – 8 keV (10 keV @ 1.5 GeV)

Integrated power* incident on the mask

415 mW/cm/100 mA @ 1.3 GeV

1140 mW/cm/100 mA @ 1.5 GeV

Distance source to mask

10 m

Horizontal angle of acceptance

6.5 mrad

Horizontal beam width at mask

65 mm

Low energy filters

Aluminum (3 mm, 6 mm, 9mm, 14 mm, 40mm); Be (300mm), Kapton (50mm) and any combination of two filters

Exposure station / scanner

CAMD construction

Mask formats

 4” steel ring

NIST ring

Tilt option

Available, manual

Aligned exposure option

Available, manual

* The term ‘integrated power’ describes the integration over the vertical beam profile. The unit “W/cm/100mA” reflects the amount of energy deposited in 1cm horizontal distance on the mask/substrate at an electron current of 100mA.
 

Planned upgrade

To install a wider Beryllium window to provide a 4” (100mm) wide beam at the scanner. The window has been purchased and will be installed in the near future.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

XRML 4 Beamline

The XRLM 4 beamline will be installed at CAMD’s wiggler. There are three different phases planned for the installation of a number of beamlines at this source.
 
Phase ‘0’ has been finished by November 2000. In this phase the lithography was the only beamline being operated.
 
Phase ‘1’ construction is currently in progress. In this phase the Protein Crystallography (‘PX’) beamline and the XRLM 4 beamline will be attached to the existing dipole chamber. Phase ‘2’ is projected for 2002 with a total of 4 beamlines mounted to a new special made dipole chamber.
 
Characteristics of XRLM 4 Beamline in Phase ‘0’

Property

Value

Exposure spectrum

 ‘white light’ at wiggler port

Vacuum windows

1 Be window (250 µm thick, water cooled)

Transmitted spectrum

3 keV – 50 keV (1.5 GeV, 7T)

Integrated power incident *

9.9 W/cm/100 mA @ 7T (total calculated)

4.4 W/cm/100 mA @ 6T (measured w/ filters)

Distance source to mask

10 m

Horizontal angle of acceptance

8 mrad

Horizontal beam width at mask

80 mm

Low energy filters

Individual filters placed in an air gap between the Be window and the scanner

Exposure station / scanner

CAMD construction, in-air scanner

Water cooled mask-substrate assembly

Mask/substrate formats

4” steel ring

Maximum horizontal width of sample

4”

Tilt/rotate option

Not available

Aligned exposure option

Not available

* The term ‘integrated power’ describes the integration over the vertical beam profile. The unit “W/cm/100mA” reflects the amount of energy deposited in 1cm horizontal distance on the mask/substrate at an electron current of 100mA.