Bransen Plasma Asher

  

An O2 RF plasma can be used at CAMD to strip one to five microns of resist from up to 6 four inch wafers at a time.  The Bransen Asher is run at 600W at time, temperture, or manual control.

Minor modification – The Bransen Plasma Asher reduced Nitrogen purge flow for the safe ashing of thin fragile membranes

Features:

  • 1500 W 13.56 MHz RF generator
  • Thermal probe
  • Automatic processing
  • Capable of processing with up to three gases (only one installed)

Capabilities:

  • Reactive ion etching with O2

Applications:

  • Resist stripping
  • Substrate cleaningBransen Plasma Asher Manual.pdf

PDF documents:

 

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